NTE Electronics MJ10012 Silicon NPN Power Darlington Transistor, 400V, 10 Amp
- High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc.
- Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125.
- Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors.